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In a simpler but related process, anisotropic chemical etching of III V compound wafers, comprising a (100) top surface and zinc blend face-centered cubic crystal lattices, can produce freestanding wires with triangular cross sections.14,24 Figure 13.1d shows representative fabricating steps for generating triangular wires from GaAs wafers ( s-GaAs). The top frame illustrates the formation of lines of photoresist (PR) aligned along the (01 1 ) direction on the GaAs (100) surface. The middle frame shows the resulting pro les after wet etching of the patterned GaAs wafer in a solution of phosphoric acid and hydrogen peroxide. Complete etching followed by removal of the PR yields GaAs wires (the bottom frame in Fig. 13.1d). Figure 13.1e shows partially undercut GaAs wires. Figure 13.1f shows fully undercut GaAs wires randomly assembled on the mother wafer and depicts the exible nature of the nanowires generated using this method.24 As with the process of Fig. 13.1a, these steps can be repeated to consume the entire thickness of the GaAs and to yield large quantities of wires. Micro/nanostructures generated using these and related top-down approaches are geometrically and electrically homogeneous, with layouts that can be controlled over a wide range to realize not only ribbons and wires but also bars, platelets, membranes, and other structures. The main limitations of the top-down approach are as follows: (1) The composition of the fabricated objects is limited to materials that are readily available in wafer or thin- lm forms, (2) the etching processes can lead to some level of roughness on the surfaces of the structures, and (3) dimensions of less than 20 nm, for other than the thickness, are dif cult to obtain reliably. c# upc-a reader C# UPC-A Barcode Scanner Library - Read & Scan UPC-A Using ...
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